AOD2904 general description product summary v ds i d (at v gs =10v) 70a r ds(on) (at v gs =10v) < 10m? r ds(on) (at v gs =6v) < 12.5m? applications 100% uis tested 100% rg tested symbol v 100v n-channel mosfet orderable part number package type form minimum order quantity 100v ? trench power mv mosfet technology ? low r ds(on) ? low gate charge ? optimized for fast-switching applications absolute maximum ratings t a =25c unless otherwise noted v maximum units AOD2904 to-252 tape & reel 2500 ? synchronous rectification in dc/dc and ac/dc conv erters ? industrial and motor drive applications 100 parameter drain-source voltage g ds to252 dpak top view bottom view g s d g s d v ds v gs i dm i as avalanche energy l=0.1mh c e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc t a =25c t a =70c t c =25c t c =100c t c =25c avalanche current c continuous drain current thermal characteristics parameter max t a =70c 1.6 c units junction and storage temperature range -55 to 175 typ p dsm w t a =25c 2.5 power dissipation a maximum junction-to-ambient a c/w r q ja 15 40 20 w i d v a 40 a 180 i dsm 8.5 mj 80 10.5 70 va 20 v maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.0 50 1.2 power dissipation b 62.5 t c =100c 10s p d 100 120 125 gate-source voltage pulsed drain current c 53 drain-source voltage continuous drain current g rev.1.0: april 2015 www.aosmd.com page 1 of 6
symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.3 2.9 3.4 v 8.2 10 t j =125c 14.2 17.2 9.7 12.5 m? g fs 62 s v sd 0.7 1 v i s 70 a c iss 2785 pf c oss 238 pf c rss 12 pf r g 0.25 0.55 0.85 ? q g (10v) 37 52 nc q gs 11.5 nc q gd 5 nc t d(on) 13 ns t r 8.5 ns t d(off) 29 ns t f 4 ns t rr 35 ns gate source charge gate drain charge switching parameters reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz f=1mhz output capacitance v gs =10v, v ds =50v, i d =20a total gate charge gate resistance i dss zero gate voltage drain current r ds(on) static drain-source on-resistance i s =1a,v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a v ds =v gs, i d =250 m a forward transconductance maximum body-diode continuous current g input capacitance diode forward voltage dynamic parameters v gs =6v, i d =20a body diode reverse recovery time turn-off delaytime turn-off fall time v gs =10v, v ds =50v, r l =2 w , r gen =3 w i f =20a, di/dt=500a/ m s turn-on rise time turn-on delaytime electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, vgs=0v m? a v ds =0v, v gs =20v gate-body leakage current t rr 35 ns q rr 210 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =175 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev.1.0: april 2015 www.aosmd.com page 2 of 6
typical electrical and thermal characteristics 0 20 40 60 80 100 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 4 6 8 10 12 14 0 5 10 15 20 25 30 r ds(on) (m w ) i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =6v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =6v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =4v 4.5v 6v 10v 5v d figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 0 4 8 12 16 20 24 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev.1.0: april 2015 www.aosmd.com page 3 of 6
typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 0 20 40 60 80 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) c oss c rss v ds =50v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) v > or equal to 6v 10 m s 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 10ms pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 6v figure 9: maximum forward biased safe operating area (note f) r q jc =1.2 c/w rev.1.0: april 2015 www.aosmd.com page 4 of 6
typical electrical and thermal characteristics 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) t a =25 c 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t case ( c) figure 14: current de-rating (note f) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) r q ja =50 c/w rev.1.0: april 2015 www.aosmd.com page 5 of 6
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l unclamped inductive switching (uis) test circuit & waveforms vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev.1.0: april 2015 www.aosmd.com page 6 of 6
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